Prague, March 20, 2015 - Samsung Electronics Co., Ltd., a world leader in advanced memory technology, introduces high-performance 128GB 3bit NAND storage for mobile devices, which is based on Embedded MultiMedia technologyCard (eMMC) 5.0. Flagships among smartphones are already switching to 128GB memory storage based on the Universal Flash Storage (UFS) 2.0 or EMMC 5.1 standards. Similarly, even mid-range smartphones will now be able to increase their capacity to 128 GB thanks to the new repository Samsung 3bit NAND eMMC 5.0. This memory chip has the largest capacity within the eMMC 5.0 standard.
“With the launch of our NAND-based 3bit eMMC 5.0 series, we expect to lead the way in the expansion of high-capacity mobile storage. We continue to develop our mobile memory offering with improved performance and higher capacity to meet growing customer demand across the mobile phone industry.” said Dr. Jung-Bae Lee, senior vice president of the Memory Product Planning and Application Engineering team at Samsung Electronics.
Sequential reading data of the new 128GB eMMC 5.0 storage from Samsung runs at speed 260 MB / s. This is the same performance as the NAND-based MLC eMMC 5.1 memory. Random read and write performance je 6000 IOPS, respectively. 5000 IOPS, which is fast enough to support high definition videos and advanced multitasking functions. Compared to external memory cards, these read and write speeds are approx 4 times a 10 times higher.
The new 3bit eMMC 5.0 series expands Samsung's business from supplying SSDs for data centers, servers and computers to the entire mobile storage market. Samsung will continue to introduce 3-bit NAND Flash memories through the development of high-performance and high-capacity solutions, as well as continue to strengthen the competitiveness of its memory technology business.
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