Samsung unveiled its plans in the semiconductor business at a conference in the United States. He showed a roadmap showing a gradual transition to 7nm LPP (Low Power Plus), 5nm LPE (Low Power Early), 4nm LPE/LPP and 3nm Gate-All-Around Early/Plus technology.
The South Korean giant will begin production of 7nm LPP technology, which will use EUV lithography, in the second half of next year, while at the same time rival TSMC wants to start production with an improved 7nm+ process and start risky production with a 5nm process.
Samsung will start manufacturing chipsets with the 5nm LPE process at the end of 2019 and the 4nm LPE/LPP process during 2020. It is the 4nm technology that will become the last technology that will use FinFET transistors. Both the 5nm and the 4nm process are expected to reduce the size of the chipset, but at the same time increase performance and reduce consumption.
Starting with 3nm technology, the company will switch to its own MBCFET (Multi Bridge Channel FET) GAA (Gate All Around) architecture. If everything goes according to plan, chipsets should be produced in 3 using the 2022nm process.
